Invention Grant
- Patent Title: Etch selectivity improved by laser beam
-
Application No.: US16171875Application Date: 2018-10-26
-
Publication No.: US10861706B2Publication Date: 2020-12-08
- Inventor: Christine Y Ouyang , Li-Te Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/268 ; H01L21/033 ; H01L29/66 ; H01L29/78 ; H01L21/02
Abstract:
A method for forming a semiconductor structure is provided. The method includes forming a first layer over a semiconductor substrate. The first layer is made of a first material. The method also includes forming a second layer over the first layer. The second layer is made of a second material that is different from the first material. The second layer has a first opening exposing a portion of a top surface of the first layer. The method also includes heating the first layer and the second layer with a laser beam, depositing a third layer over the second layer and covering a sidewall of the first opening, and etching the first layer through the first opening to form a second opening in the first layer.
Public/Granted literature
- US20200135483A1 ETCH SELECTIVITY IMPROVED BY LASER BEAM Public/Granted day:2020-04-30
Information query
IPC分类:
