Invention Grant
- Patent Title: Methods of manufacturing semiconductor devices
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Application No.: US16148649Application Date: 2018-10-01
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Publication No.: US10861710B2Publication Date: 2020-12-08
- Inventor: Hung-Jui Kuo , Ming-Tan Lee , Chen-Cheng Kuo , De-Yuan Lu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/027
- IPC: H01L21/027 ; H01L21/48 ; H01L21/56 ; H01L21/683 ; H01L23/31 ; H01L23/538 ; H01L23/00 ; H01L25/10 ; H01L25/00
Abstract:
A semiconductor device and method of making a conductive connector is provided. In an embodiment an opening is formed within a photoresist by adjusting the center point of an in-focus area during the exposure process. Once the photoresist has been developed to form an opening, an after development baking process is utilized to reshape the opening. Once reshaped, a conductive material is formed into the opening to take on the shape of the opening.
Public/Granted literature
- US20200006086A1 Semiconductor Device and Method of Manufacture Public/Granted day:2020-01-02
Information query
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