Invention Grant
- Patent Title: Semiconductor device, power conversion apparatus, and method of manufacturing semiconductor device
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Application No.: US16447569Application Date: 2019-06-20
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Publication No.: US10861758B2Publication Date: 2020-12-08
- Inventor: Akitoshi Shirao
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2018-143468 20180731
- Main IPC: H01L23/28
- IPC: H01L23/28 ; H01L23/16 ; H01L21/56 ; H02M7/5387 ; H01L21/54 ; H01L23/31 ; H01L21/52
Abstract:
A semiconductor device includes a case surrounding a region that contains semiconductor elements and wires. The case is provided with s(an integer greater than k and equal to or greater than three)-pieces of discharge paths for discharging an encapsulation member to the region. The s-pieces of discharge paths are provided so as to surround the region as seen in a plan view. The s-pieces of discharge paths are spirally provided as seen in a plan view.
Public/Granted literature
- US20200043818A1 SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-02-06
Information query
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