Invention Grant
- Patent Title: Semiconductor device package having an electrical contact with a high-melting-point part and method of manufacturing the same
-
Application No.: US16268385Application Date: 2019-02-05
-
Publication No.: US10861779B2Publication Date: 2020-12-08
- Inventor: Chang-Lin Yeh , Yu-Chang Chen
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Koahsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Koahsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L25/16

Abstract:
A semiconductor device package includes a substrate, a first solder paste, an electrical contact and a first encapsulant. The substrate includes a conductive pad. The first solder paste is disposed on the pad. The electrical contact is disposed on the first solder paste. The first encapsulant encapsulates a portion of the electrical contact and exposes the surface of the electrical contact. The electrical contact has a surface facing away from the substrate. A melting point of the electrical contact is greater than that of the first solder paste. The first encapsulant includes a first surface facing toward the substrate and a second surface opposite to the first surface. The second surface of the first encapsulant is exposed to air.
Public/Granted literature
- US20190393140A1 SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-12-26
Information query
IPC分类: