Invention Grant
- Patent Title: Redistribution layers including reinforcement structures and related semiconductor device packages, systems and methods
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Application No.: US16106791Application Date: 2018-08-21
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Publication No.: US10861782B2Publication Date: 2020-12-08
- Inventor: Hyunsuk Chun , Chan H. Yoo , Tracy N. Tennant
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L21/48 ; H01L23/31 ; H01L23/00
Abstract:
Embodiments of a redistribution layer structure comprise a low-k dielectric material and incorporating a reinforcement structure proximate and inward of a peripheral edge thereof, the reinforcement structure comprising conductive material electrically isolated from conductive paths through the RDL structure. Semiconductor packages including an embodiment of the RDL structure and methods of fabricating such RDL structures are also disclosed.
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Information query
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