Invention Grant
- Patent Title: Manufacturing method of stacked multilayer structure
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Application No.: US16696171Application Date: 2019-11-26
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Publication No.: US10861789B2Publication Date: 2020-12-08
- Inventor: Makoto Mizukami , Takeshi Kamigaichi
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-173445 20070629
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/11578 ; H01L27/1157 ; H01L27/06 ; H01L27/10 ; H01L27/102 ; H01L27/24 ; H01L21/768 ; H01L23/522 ; H01L21/02 ; H01L27/11556 ; H01L45/00

Abstract:
A stacked multilayer structure according to an embodiment of the present invention comprises: a stacked layer part including a plurality of conducting layers and a plurality of insulating layers, said plurality of insulating layers being stacked alternately with each layer of said plurality of conducting layers, one of said plurality of insulating layers being a topmost layer among said plurality of conducting layers and said plurality of insulating layers; and a plurality of contacts, each contact of said plurality of contacts being formed from said topmost layer and each contact of said plurality of contacts being in contact with a respective conducting layer of said plurality of conducting layers, a side surface of each of said plurality of contacts being insulated from said plurality of conducting layers via an insulating film.
Public/Granted literature
- US20200168546A1 MANUFACTURING METHOD OF STACKED MULTILAYER STRUCTURE Public/Granted day:2020-05-28
Information query
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