Invention Grant
- Patent Title: Integrated circuit structure having a crown-shaped semiconductor strip and an isolation region recessed in the substrate
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Application No.: US16426195Application Date: 2019-05-30
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Publication No.: US10861800B2Publication Date: 2020-12-08
- Inventor: Wan-Chun Kuan , Chih-Teng Liao , Yi-Wei Chiu , Tzu-Chan Weng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: KR Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: KR Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L21/8234 ; H01L21/84 ; H01L21/762 ; H01L21/306 ; H01L23/00 ; H01L29/08 ; H01L29/10 ; H01L29/161 ; H01L29/24
Abstract:
An integrated circuit structure includes a semiconductor substrate having a plurality of semiconductor strips, a first recess being formed by two adjacent semiconductor strips among the plurality of semiconductor strips, a second recess being formed within the first recess, and an isolation region being provided in the first recess and the second recess. The second recess has a lower depth than the first recess.
Public/Granted literature
- US20190295960A1 Dummy Fin Etch to Form Recesses in Substrate Public/Granted day:2019-09-26
Information query
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