Invention Grant
- Patent Title: High frequency module
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Application No.: US16447141Application Date: 2019-06-20
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Publication No.: US10861805B2Publication Date: 2020-12-08
- Inventor: Daijiro Ishibashi
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2017-003521 20170112
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L23/66 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L23/538 ; H01L23/00 ; H01P5/107 ; H01Q1/22 ; H01Q13/02 ; H01P5/08 ; H01P11/00 ; H01L23/28 ; H01L23/12 ; H01P3/12

Abstract:
A high frequency module includes: a package section including a semiconductor chip, a first portion of a backshort being integrated with the semiconductor chip by a first resin, and a first rewiring line electrically coupled to the semiconductor chip and including a portion to be an antenna coupler; and a waveguide with which a second portion of the backshort is integrated, wherein the package section and the waveguide are integrated by a second resin, to position the portion to be the antenna coupler between the waveguide and the backshort.
Public/Granted literature
- US20190311998A1 HIGH FREQUENCY MODULE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-10-10
Information query
IPC分类: