Invention Grant
- Patent Title: Semiconductor device with multiple polarity groups
-
Application No.: US16215325Application Date: 2018-12-10
-
Publication No.: US10861841B2Publication Date: 2020-12-08
- Inventor: Ying-Cheng Tseng , Yu-Chih Huang , Chih-Hsuan Tai , Ting-Ting Kuo , Chi-Hui Lai , Ban-Li Wu , Chiahung Liu , Hao-Yi Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L23/528 ; H01L23/00 ; H01L49/02 ; H01L21/768 ; H01L21/70 ; H01L23/522 ; H01L25/10

Abstract:
A semiconductor device includes passive electrical components in a substrate; and an interconnect structure over the passive electrical components, conductive features of the interconnect structure being electrically coupled to the passive electrical components. The conductive features of the interconnect structure includes a first conductive line over the substrate; a conductive bump over the first conductive line, where in a plan view, the conductive bumps has a first elongated shape and is entirely disposed within boundaries of the first conductive line; and a first via between the first conductive line and the conductive bump, the first via electrically connected to the first conductive line and the conductive bump, where in the plan view, the first via has a second elongated shape and is entirely disposed within boundaries of the conductive bump.
Public/Granted literature
- US20200105738A1 SEMICONDUCTOR DEVICE WITH MULTIPLE POLARITY GROUPS Public/Granted day:2020-04-02
Information query
IPC分类: