An electrostatic discharge (ESD) device with fast response to high transient currents. The ESD device includes a short-pulse discharge (SPD) path and a long-pulse discharge (LPD) path. The SPD path provides robust response to ESD events, and it triggers a self-bias configuration of the LPD path. Advantageously, the SPD path reduces the risk of ESD voltage overshoot by promptly discharging short-pulse currents, such as a charge device model (CDM) current, whereas the LPD path provides efficient discharge of long-pulse currents, such as a human body model (HBM) current. In one implementation, for example, the SPD path includes a MOS transistor, and the LPD includes a bipolar transistor having a base coupled to the source of the MOS transistor.