Invention Grant
- Patent Title: Method of making a capacitor electrode of a memory device having alternately stacked oxides and nitrides over a sacrificial layer
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Application No.: US16019552Application Date: 2018-06-27
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Publication No.: US10861857B2Publication Date: 2020-12-08
- Inventor: Feng-Yi Chang , Fu-Che Lee
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou
- Agent Winston Hsu
- Priority: CN201810520810 20180528
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/311 ; H01L49/02
Abstract:
A semiconductor memory device and a method of forming the same are provided, with the semiconductor memory device including a substrate, a stacked structure, plural openings, plural flared portions and an electrode layer. The stacked structure is disposed on the substrate and includes alternately stacked oxide material layers and stacked nitride material layers. Each of the openings is disposed in the stacked structure, and each of the flared portions is disposed under each of the openings, in connection with each opening. The electrode layer is disposed on surfaces of each opening and each flared portion.
Public/Granted literature
- US20190363091A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2019-11-28
Information query
IPC分类:
