In a method of manufacturing a semiconductor device according to an embodiment of the present disclosure, a stacked structure including interlayer insulating layers and interlayer sacrificial layers that are alternately stacked is formed on a substrate. A trench is formed passing through the stacked structure on the substrate. A crystalline liner insulating layer is formed on a sidewall of the trench. A ferroelectric insulating layer and a channel layer are formed on the crystalline liner insulating layer. The interlayer sacrificial layers and the crystalline liner insulating layer are selectively removed to form a recess selectively exposing the ferroelectric insulating layer. The recess is filled with a conductive layer to form an electrode layer.