Invention Grant
- Patent Title: Power semiconductor devices having gate trenches and buried edge terminations and related methods
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Application No.: US15372505Application Date: 2016-12-08
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Publication No.: US10861931B2Publication Date: 2020-12-08
- Inventor: Daniel J. Lichtenwalner , Edward R. Van Brunt , Brett Hull
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/10 ; H01L29/78 ; H01L21/04 ; H01L29/66 ; H01L29/739 ; H01L29/16 ; H01L29/08
Abstract:
Semiconductor devices include a semiconductor layer structure comprising a drift region that includes a wide band-gap semiconductor material. A shielding pattern is provided in an upper portion of the drift region in an active region of the device and a termination structure is provided in the upper portion of the drift region in a termination region of the device. A gate trench extends into an upper surface of the semiconductor layer structure. The semiconductor layer structure includes a semiconductor layer that extends above and at least partially covers the termination structure.
Public/Granted literature
- US20180166530A1 POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES AND BURIED EDGE TERMINATIONS AND RELATED METHODS Public/Granted day:2018-06-14
Information query
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