Invention Grant
- Patent Title: Semiconductor devices including protruding insulation portions between active fins
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Application No.: US16398719Application Date: 2019-04-30
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Publication No.: US10861934B2Publication Date: 2020-12-08
- Inventor: Shigenobu Maeda , Hee-Soo Kang , Sang-Pil Sim , Soo-Hun Hong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2012-0138132 20121130
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/417 ; H01L29/66 ; B82Y10/00 ; H01L21/8234 ; H01L21/84 ; H01L27/12 ; H01L27/088 ; H01L29/10 ; H01L29/08 ; H01L29/16 ; H01L29/161 ; H01L29/165 ; H01L29/49 ; H01L29/51 ; H01L29/775
Abstract:
A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.
Public/Granted literature
- US20190259836A1 SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS Public/Granted day:2019-08-22
Information query
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