Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
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Application No.: US16286648Application Date: 2019-02-27
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Publication No.: US10861941B2Publication Date: 2020-12-08
- Inventor: Akira Kano , Akihiro Goryu , Kenji Hirohata
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2018-163358 20180831
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/70 ; H01L21/02
Abstract:
According to an embodiment, in a semiconductor device, a total value of a change amount of chemical potential of the semiconductor device with respect to a expansion direction of a stacking fault and the stacking fault energy of the stacking fault is zero or more.
Public/Granted literature
- US20200075733A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-03-05
Information query
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