Invention Grant
- Patent Title: Air spacers in transistors and methods forming same
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Application No.: US15966603Application Date: 2018-04-30
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Publication No.: US10861953B2Publication Date: 2020-12-08
- Inventor: Yi-Lun Chen , Chao-Hsien Huang , Li-Te Lin , Chun-Hsiung Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/51 ; H01L29/78 ; H01L29/66 ; H01L21/8238
Abstract:
A method includes forming a gate stack over a semiconductor region, and forming a first gate spacer on a sidewall of the gate stack. The first gate spacer includes an inner sidewall spacer, and a dummy spacer portion on an outer side of the inner sidewall spacer. The method further includes removing the dummy spacer portion to form a trench, and forming a dielectric layer to seal a portion of the trench as an air gap. The air gap and the inner sidewall spacer in combination form a second gate spacer. A source/drain region is formed to have a portion on an outer side of the second gate spacer.
Public/Granted literature
- US20190334008A1 AIR SPACERS IN TRANSISTORS AND METHODS FORMING SAME Public/Granted day:2019-10-31
Information query
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