Invention Grant
- Patent Title: FinFET isolation structure
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Application No.: US16714607Application Date: 2019-12-13
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Publication No.: US10861977B2Publication Date: 2020-12-08
- Inventor: Che-Cheng Chang , Chih-Han Lin , Horng-Huei Tseng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L21/02 ; H01L21/3065 ; H01L21/3213 ; H01L21/762 ; H01L29/66
Abstract:
A device includes a semiconductive substrate, a stop layer over the semiconductive substrate, first and second semiconductive fins over the stop layer, a fin isolation structure between the first and second semiconductive fins, and a spacer at least partially extending along a sidewall of the fin isolation structure. A bottom of the fin isolation structure is lower than a top of the stop layer.
Public/Granted literature
- US20200119182A1 FINFET ISOLATION STRUCTURE Public/Granted day:2020-04-16
Information query
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