Invention Grant
- Patent Title: Light emitting device and manufacturing method thereof
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Application No.: US16151349Application Date: 2018-10-04
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Publication No.: US10862005B2Publication Date: 2020-12-08
- Inventor: Yi-Fen Lan , Chin-Yuan Ho , Tsung-Tien Wu
- Applicant: Au Optronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Priority: TW107124684A 20180717
- Main IPC: H01L33/36
- IPC: H01L33/36 ; H01L33/08 ; H01L33/26 ; H01L21/02

Abstract:
A light emitting device includes a substrate, an adhesion layer, a micro light emitting device (μLED), a first conductive layer, and a second conductive layer. A light emitting surface of the μLED is away from the substrate. The μLED includes a first semiconductive layer, a second semiconductive layer, a tether layer, a first electrode, and a second electrode. The tether layer covers a portion of sidewalls of the first semi-conductive layer, a portion of a bottom surface of the first semi-conductive layer, sidewalls of the second semiconductive layer, and a portion of a bottom surface of the second semiconductive layer. The first electrode and the second electrode are respectively electrically connected to the first semiconductive layer and the second semiconductive layer. The first conductive layer and the second conductive layer are respectively electrically connected to the first electrode and the second electrode.
Public/Granted literature
- US20200028030A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-01-23
Information query
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