Invention Grant
- Patent Title: Semiconductor structure and manufacturing method of the same
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Application No.: US16242689Application Date: 2019-01-08
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Publication No.: US10862023B2Publication Date: 2020-12-08
- Inventor: Tai-Yen Peng , Yu-Shu Chen , Chien Chung Huang , Sin-Yi Yang , Chen-Jung Wang , Han-Ting Lin , Jyu-Horng Shieh , Qiang Fu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; H01L43/12 ; H01L43/10
Abstract:
The present disclosure provides a semiconductor structure, including a bottom electrode via, a top surface of the bottom electrode via having a first width, a barrier layer surrounding the bottom electrode via, and a magnetic tunneling junction (MTJ) over the bottom electrode via, a bottom of the MTJ having a second width, the first width being narrower than the second width.
Public/Granted literature
- US20200035907A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2020-01-30
Information query
IPC分类:
