Invention Grant
- Patent Title: Method for high resolution patterning of organic layers
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Application No.: US15740265Application Date: 2016-06-27
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Publication No.: US10862036B2Publication Date: 2020-12-08
- Inventor: Tung Huei Ke , Pawel Malinowski , Atsushi Nakamura
- Applicant: IMEC VZW , FUJIFILM CORPORATION
- Applicant Address: BE Leuven
- Assignee: IMEC VZW
- Current Assignee: IMEC VZW
- Current Assignee Address: BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP15174309 20150629
- International Application: PCT/EP2016/064898 WO 20160627
- International Announcement: WO2017/001353 WO 20170105
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/05 ; H01L51/42 ; H01L51/56

Abstract:
At least one embodiment relates to a method for photolithographic patterning of an organic layer on a substrate. The method includes providing a water-soluble shielding layer over the organic layer. In addition, the method includes providing a photoresist layer on the water-soluble shielding layer. The method also includes photolithographic patterning of the photoresist layer to form a patterned photoresist layer. Further, the method includes etching the water-soluble shielding layer and the organic layer, using the patterned photoresist layer as a mask, to form a patterned water-soluble shielding layer and a patterned organic layer. Still further, the method includes removing the patterned water-soluble shielding layer. The method includes, before providing the water-soluble shielding layer, providing a hydrophobic protection layer having a hydrophobic upper surface on the organic layer.
Public/Granted literature
- US20180190908A1 Method for High Resolution Patterning of Organic Layers Public/Granted day:2018-07-05
Information query
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