Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
-
Application No.: US16486940Application Date: 2017-04-04
-
Publication No.: US10862268B2Publication Date: 2020-12-08
- Inventor: Hiroyuki Kawahara
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2017/014080 WO 20170404
- International Announcement: WO2018/185829 WO 20181011
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/10 ; H01S5/026 ; H01S5/22

Abstract:
A semiconductor device includes a substrate, a semiconductor laser part formed on the substrate and having an active layer with an uniform composition and a first ridge structure, and an adjacent part formed on the substrate, having a core layer with an uniform composition and a second ridge structure, and being an optical modulator or an optical waveguide which is in contact with the semiconductor laser part, wherein the first ridge structure is largest in width at a first contact part which is in contact with the second ridge structure, and the second ridge structure is largest in width at a second contact part which is in contact with the first ridge structure.
Public/Granted literature
- US20200021076A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-01-16
Information query