Invention Grant
- Patent Title: Optical device structure using GaN substrates and growth structures for laser applications
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Application No.: US16529587Application Date: 2019-08-01
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Publication No.: US10862273B1Publication Date: 2020-12-08
- Inventor: James W. Raring
- Applicant: Soraa Laser Diode, Inc.
- Applicant Address: US CA Goleta
- Assignee: Soraa Laser Diode, Inc.
- Current Assignee: Soraa Laser Diode, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01S5/22
- IPC: H01S5/22 ; H01S5/10 ; H01S5/20 ; H01S5/32 ; H01S5/343 ; H01S5/028 ; H01S5/02 ; H01S5/00 ; B82Y20/00 ; H01S5/40
Abstract:
Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
Information query
