Invention Grant
- Patent Title: High-frequency amplifier
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Application No.: US16535634Application Date: 2019-08-08
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Publication No.: US10862440B2Publication Date: 2020-12-08
- Inventor: Masatoshi Kamitani , Shingo Matsuda , Kouki Yamamoto
- Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
- Current Assignee: PANASONIC SEMICONDUCTOR SOLUTIONS CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: McDermott Will & Emery LLP
- Main IPC: H03F3/68
- IPC: H03F3/68 ; H03F3/19 ; H03F1/02 ; H03F1/56 ; H04B1/04 ; H03F3/21 ; H03F3/60

Abstract:
A high-frequency amplifier includes: a carrier amplifier amplifying a first signal; a peak amplifier amplifying a second signal; a first transmission line connected between output terminals of the carrier amplifier and the peak amplifier, and having an electrical length equal to one-quarter wavelength of a center frequency in the predetermined frequency band; a second transmission line connected between one end of the first transmission line and the output terminal of the high-frequency amplifier, and having an electrical length equal to one-quarter wavelength of the center frequency; and an impedance compensation circuit with one end connected to a node between the first transmission line and the second transmission line. At the center frequency, an imaginary part of an impedance during viewing of the impedance compensation circuit from the node is opposite in polarity from an imaginary part of an impedance during viewing of the second transmission line from the node.
Public/Granted literature
- US20190363683A1 HIGH-FREQUENCY AMPLIFIER Public/Granted day:2019-11-28
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