Invention Grant
- Patent Title: Amplification device of cascode structure
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Application No.: US16280882Application Date: 2019-02-20
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Publication No.: US10862444B2Publication Date: 2020-12-08
- Inventor: Jong myeong Kim
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2018-0080133 20180710
- Main IPC: H03F1/22
- IPC: H03F1/22 ; H03F3/45 ; H03F1/02 ; H03F3/24 ; H03F3/21 ; H03F3/213

Abstract:
An amplification device having a cascode structure includes an amplification circuit including a first transistor and a second transistor, cascode-connected to each other and receiving an operating voltage to amplify an input signal; a first bias circuit generating a first bias voltage and supplying the first bias voltage to the first transistor; and a second bias circuit generating a second bias voltage based on a control voltage and the operating voltage and supplying the second bias voltage to the second transistor.
Public/Granted literature
- US20200021259A1 AMPLIFICATION DEVICE OF CASCODE STRUCTURE Public/Granted day:2020-01-16
Information query
IPC分类: