Invention Grant
- Patent Title: Ceramic structure, method for manufacturing the same, and member for semiconductor manufacturing apparatus
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Application No.: US15425098Application Date: 2017-02-06
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Publication No.: US10863587B2Publication Date: 2020-12-08
- Inventor: Kyohei Atsuji , Noboru Nishimura , Yuji Katsuda
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JP2016-037658 20160229
- Main IPC: H05B3/28
- IPC: H05B3/28 ; C04B37/00 ; C04B35/645 ; C04B35/581 ; H05B3/26 ; H01L21/67 ; H05B3/14 ; C04B37/02 ; H05B1/02 ; H05B3/12
Abstract:
A ceramic structure 10 includes a heater electrode 14 within a disk-shaped AlN ceramic substrate 12. The heater electrode 14 contains a metal filler in the main component WC. The metal filler (such as Ru or RuAl) has a lower resistivity and a higher thermal expansion coefficient than AlN. An absolute value of a difference |ΔCTE| between a thermal expansion coefficient of the AlN ceramic substrate 12 and a thermal expansion coefficient of the heater electrode 14 at a temperature in the range of 40° C. to 1000° C. is 0.35 ppm/° C. or less.
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