Invention Grant
- Patent Title: In-vehicle semiconductor device
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Application No.: US15769700Application Date: 2016-09-13
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Publication No.: US10882471B2Publication Date: 2021-01-05
- Inventor: Yoshimitsu Yanagawa , Masahiro Matsumoto , Hiroshi Nakano , Akira Kotabe
- Applicant: Hitachi Automotive Systems, Ltd.
- Applicant Address: JP Hitachinaka
- Assignee: Hitachi Automotive Systems, Ltd.
- Current Assignee: Hitachi Automotive Systems, Ltd.
- Current Assignee Address: JP Hitachinaka
- Agency: Crowell & Moring LLP
- Priority: JP2015-212168 20151028
- International Application: PCT/JP2016/076943 WO 20160913
- International Announcement: WO2017/073188 WO 20170504
- Main IPC: B60R16/02
- IPC: B60R16/02 ; G05F1/56 ; H01L29/00 ; B60W50/00 ; H03K17/082 ; F02D45/00 ; B60L3/04 ; H03K17/22 ; F02D41/26

Abstract:
Even when a positive/negative surge is applied to a power-supply line, occurrence of malfunction in a semiconductor device is lessened. In an in-vehicle semiconductor device, regulators convert an externally-supplied voltage to generate voltages. A voltage monitoring unit includes a voltage monitoring circuit and a switch, and monitors first to third voltages. An internal circuit has a processor operated by the voltage, and an oscillator operated by the voltage and generating a clock signal to be provided the processor. The voltage monitoring unit stops providing the clock signal to the processor when the voltage level of at least any one of the first to third voltages is below a set value. The voltage monitoring unit provides the clock signal to the processor when the voltage levels of all the first to third voltages exceed the set value.
Public/Granted literature
- US20180304829A1 In-Vehicle Semiconductor Device Public/Granted day:2018-10-25
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