Invention Grant
- Patent Title: Through silicon interposer wafer and method of manufacturing the same
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Application No.: US16088021Application Date: 2017-03-23
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Publication No.: US10882737B2Publication Date: 2021-01-05
- Inventor: Navab Singh , Daw Don Cheam
- Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
- Applicant Address: SG Singapore
- Assignee: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
- Current Assignee: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH
- Current Assignee Address: SG Singapore
- Agency: Womble Bond Dickinson (US) LLP
- Priority: SG10201602341R 20160324
- International Application: PCT/SG2017/050145 WO 20170323
- International Announcement: WO2017/164816 WO 20170928
- Main IPC: H01L21/48
- IPC: H01L21/48 ; B81B7/00 ; B81C1/00 ; H01L23/48 ; H01L23/14 ; H01L23/13 ; H01L23/498
Abstract:
A through silicon interposer wafer and method of manufacturing the same. A through silicon interposer wafer having at least one cavity formed therein for MEMS applications and a method of manufacturing the same are provided. The through silicon interposer wafer includes one or more filled silicon vias formed sufficiently proximate to the at least one cavity to provide support for walls of the at least one cavity during subsequent processing of the interposer wafer.
Public/Granted literature
- US20190084826A1 A THROUGH SILICON INTERPOSER WAFER AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-03-21
Information query
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