Invention Grant
- Patent Title: Apparatus and method for metrology
-
Application No.: US15908201Application Date: 2018-02-28
-
Publication No.: US10883820B2Publication Date: 2021-01-05
- Inventor: Baohua Niu , Ji-Feng Ying , David Hung-I Su
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: G01B11/06
- IPC: G01B11/06 ; G03F7/20 ; G01N21/84 ; G01N21/95 ; G01N21/956 ; H01L21/66

Abstract:
A method of performing metrology analysis of a thin film includes coupling a radiation into an optical element disposed adjacent to a surface of the thin film. The radiation is coupled such that the radiation is totally internally reflected at an interface between the optical element and the thin film. An evanescent radiation generated at the interface penetrates the thin film. The method furthers include analyzing the evanescent radiation scattered by the thin film to obtain properties of the thin film.
Public/Granted literature
- US20190145756A1 APPARATUS AND METHOD FOR METROLOGY Public/Granted day:2019-05-16
Information query