A method for memory management in a storage system is provided. The method includes defining a required set of pages for writes to solid-state memory and defining multiple levels of indirection for writing data to the solid-state memory, comprising data stripes, each having a plurality of allocation units and each of the allocation units having a plurality of data units. The method includes assigning portions of an allocation unit to a plurality of data units such that one portion of the allocation unit fills an instance of the required set of pages that straddles a boundary between a first data unit and a second data unit, and writing the plurality of data units to the solid-state memory, with the plurality of data units satisfying the required set of pages for writes to solid-state memory.