A method of manufacturing an integrated circuit includes manufacturing a first set of conductive features by a first mask, positioning a set of gates in a second direction, manufacturing a second set of conductive features by a second mask, and electrically coupling a first portion of the set of gates to a second portion of the set of gates. The first and second set of conductive features is in a first direction and a first layer. The set of gates is in a second layer. The first portion of the set of gates corresponds to a gate terminal of a first n-type transistor, the second portion of the set of gates corresponds to a gate terminal of a first p-type transistor, the first n-type transistor being part of a first transmission gate, and the first p-type transistor being part of a second transmission gate.