Systems, apparatuses, and methods related to processing operations in a memory array are described. Sensing circuitry within a memory array may, for example, employ a non-linear activation function to perform certain operations, including processing or basic processing functions. A memory array can include multiple cells each coupled to respective sense lines and select lines. Sensing circuitry of the array may receive a charge from each of the cells via the sense lines and determine whether an aggregate charge of the is greater than a threshold. The sensing circuitry may then take certain actions, or refrain from taking certain actions depending on whether the aggregate charge is greater or less than the threshold. A non-linear reference voltage may be employed to manage or implement the non-linear activation function.