Invention Grant
- Patent Title: Memory device and method of controlling memory device
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Application No.: US16513494Application Date: 2019-07-16
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Publication No.: US10885973B2Publication Date: 2021-01-05
- Inventor: Hidehiro Fujiwara , Yen-Huei Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/419 ; G11C11/412 ; H01L27/11

Abstract:
A memory device includes: a memory cell array having a plurality of memory cells, wherein each of the plurality of memory cells includes a first port; a first control circuit disposed on a first side of the memory cell array and arranged to electrically connect to the plurality of first ports; and a second control circuit disposed on a second side of the memory cell array and arranged to electrically connect to the plurality of first ports; wherein the second side is opposite to the first side of the memory cell array.
Public/Granted literature
- US20200066332A1 MEMORY DEVICE AND METHOD OF CONTROLLING MEMORY DEVICE Public/Granted day:2020-02-27
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