A method is presented for mitigating conductance drift in intercalation cells for neuromorphic computing. The method includes forming a first electro-chemical random access memory (ECRAM) structure over a substrate and forming a second ECRAM over the substrate, the first and second ECRAMs sharing a common contact. The common contact can be either a source contact or a drain contact. Each of the first and second ECRAMs can include a tungsten oxide layer, an electrolyte layer, and a gate contact.