Invention Grant
- Patent Title: Method of manufacture and/or operation of ferroelectric memory array
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Application No.: US16133564Application Date: 2018-09-17
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Publication No.: US10885980B2Publication Date: 2021-01-05
- Inventor: Wenliang Chen
- Applicant: AP Memory Corp, USA
- Applicant Address: US OR Beaverton
- Assignee: AP Memory Corp, USA
- Current Assignee: AP Memory Corp, USA
- Current Assignee Address: US OR Beaverton
- Agency: Berkeley Law & Technology Group, LLP
- Main IPC: G11C14/00
- IPC: G11C14/00 ; G11C11/22
Abstract:
In one embodiment, a device is described for using ferroelectric material in a memory cell. In another embodiment, a method of operating a ferroelectric memory cell is described. Other embodiments are likewise described.
Public/Granted literature
- US20190035465A1 FERROELECTRIC MEMORY DEVICE Public/Granted day:2019-01-31
Information query
