Invention Grant
- Patent Title: Method for producing photoelectric conversion element
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Application No.: US16406651Application Date: 2019-05-08
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Publication No.: US10886072B2Publication Date: 2021-01-05
- Inventor: Hiroshi Sugimura , Shintaro Miyanishi
- Applicant: SHARP KABUSHIKI KAISHA
- Applicant Address: JP Sakai
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Sakai
- Agency: ScienBiziP, P.C.
- Priority: JP2018-090671 20180509
- Main IPC: H01G9/20
- IPC: H01G9/20 ; H01G9/00 ; H01L51/00 ; H01L51/42 ; H01L51/44

Abstract:
A method for producing a photoelectric conversion element includes forming a hole transport layer containing a hole transport material by causing the hole transport material to adhere to one of a light-absorbing layer and a conductive layer; melting the hole transport layer by heating the hole transport layer to a temperature that is higher than or equal to a melting point of the hole transport material and is in a range of 120° C. or higher and 170° C. or lower; and bonding the light-absorbing layer and the conductive layer with the hole transport layer disposed therebetween by performing cooling while bringing the other of the light-absorbing layer and the conductive layer into contact with the melted hole transport layer under pressure. The light-absorbing layer contains a compound represented by general formula (1), where A represents an organic molecule, B represents a metal atom, and X represents a halogen atom. ABX3 (1)
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