Invention Grant
- Patent Title: Mn—Zn—W—O sputtering target and production method therefor
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Application No.: US15546122Application Date: 2016-01-25
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Publication No.: US10886112B2Publication Date: 2021-01-05
- Inventor: Junichi Sugawara , Yuichi Kamori , Fusashige Tokutake
- Applicant: Dexerials Corporation
- Applicant Address: JP Tokyo
- Assignee: Dexerials Corporation
- Current Assignee: Dexerials Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kenja IP Law PC
- Priority: JP2015-013577 20150127
- International Application: PCT/JP2016/000352 WO 20160125
- International Announcement: WO2016/121367 WO 20160804
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/08 ; C04B35/645 ; C04B35/495 ; C04B35/453 ; C04B35/01 ; G11B7/243 ; C23C14/34

Abstract:
Provided are a Mn—Zn—W—O sputtering target having excellent crack resistance and a production method therefor. The Mn—Zn—W—O sputtering target has a chemical composition containing Mn, Zn, W, and O. From an X-ray diffraction pattern of the Mn—Zn—W—O sputtering target, a ratio PMnO/PW of a maximum peak intensity PMnO of a peak due to a manganese oxide composed only of Mn and O to a maximum peak intensity PW of a peak due to W is 0.027 or less.
Public/Granted literature
- US20180186699A1 Mn-Zn-W-O SPUTTERING TARGET AND PRODUCTION METHOD THEREFOR Public/Granted day:2018-07-05
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