Invention Grant
- Patent Title: Method of producing wafer and apparatus for producing wafer
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Application No.: US16299445Application Date: 2019-03-12
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Publication No.: US10886127B2Publication Date: 2021-01-05
- Inventor: Ryohei Yamamoto , Kazuyuki Hinohara
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORATION
- Current Assignee: DISCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain, Ltd.
- Priority: JP2018-046476 20180314
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/66 ; H01L21/67 ; B23K26/00 ; B24B37/00

Abstract:
A method of producing a wafer includes forming a peel-off layer in a hexagonal single-crystal ingot by applying a laser beam having a wavelength transmittable through the ingot while positioning a focal point of the laser beam in the ingot at a depth corresponding to the thickness of a wafer to be produced from an end face of the ingot, generating ultrasonic waves from an ultrasonic wave generating unit positioned in facing relation to the wafer to be produced across a water layer interposed therebetween, thereby to break the peel-off layer, and detecting when the wafer to be produced is peeled off the ingot based on a change that is detected in the height of an upper surface of the wafer to be produced by a height detecting unit positioned above the upper surface of the wafer to be produced across the water wafer interposed therebetween.
Public/Granted literature
- US20190287801A1 METHOD OF PRODUCING WAFER AND APPARATUS FOR PRODUCING WAFER Public/Granted day:2019-09-19
Information query
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