Invention Grant
- Patent Title: Method of processing wafer
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Application No.: US16008335Application Date: 2018-06-14
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Publication No.: US10886159B2Publication Date: 2021-01-05
- Inventor: Hiroshi Morikazu , Tasuku Koyanagi
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORATION
- Current Assignee: DISCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain Ltd.
- Priority: JP2017-118338 20170616
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/67 ; H01L21/304

Abstract:
A method of processing a wafer includes: preparing a support substrate that can transmit ultraviolet rays having a wavelength of 300 nm or shorter and can support the wafer thereon; integrating a face side of the wafer and the support substrate by sticking the face side of the wafer and the support substrate to each other with an UV-curable resin whose adhesive power can be lowered by ultraviolet rays applied thereto interposed therebetween, thereby integrally combining the wafer and the support substrate with each other; processing a reverse side of the wafer; destroying the UV-curable resin by applying a focused laser beam in an ultraviolet range having a wavelength of 300 nm or shorter from a support substrate side; and peeling off the support substrate from the face side of the wafer.
Public/Granted literature
- US20180366362A1 METHOD OF PROCESSING WAFER Public/Granted day:2018-12-20
Information query
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