Invention Grant
- Patent Title: Radiator component and heat dissipation system for power semiconductor device
-
Application No.: US16647923Application Date: 2018-07-06
-
Publication No.: US10886194B2Publication Date: 2021-01-05
- Inventor: Sheng Zhang , Ji Long Yao , Yan Feng Zhao , Lei Shi , Ze Wei Liu
- Applicant: Siemens Aktiengesellschaft
- Applicant Address: DE Munich
- Assignee: Siemens Aktiengesellschaft
- Current Assignee: Siemens Aktiengesellschaft
- Current Assignee Address: DE Munich
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: CN201710897202 20170928
- International Application: PCT/EP2018/068343 WO 20180706
- International Announcement: WO2019/063154 WO 20190404
- Main IPC: H01L23/467
- IPC: H01L23/467 ; H01L25/065

Abstract:
Embodiments disclose a radiator component and a heat dissipation system for a power semiconductor device. The radiator component for a power semiconductor device includes a heat dissipation body including an inner-ring substrate, an outer-ring substrate, and a plurality of heat sinks. In an embodiment, the outer-ring substrate surrounds the inner-ring substrate and the plurality of heat sinks are arranged between the inner-ring substrate and the outer-ring substrate. One or more first power semiconductor device arrangement positions are provided on an inner circumferential surface of the inner-ring substrate and one or more second power semiconductor device arrangement positions are arranged on an outer circumferential surface of the outer-ring substrate. The radiator component further includes a fan component. The embodiments can save on space, reduce costs, improve the heat dissipation efficiency, and avoid the problem of disturbances between a plurality of fans.
Public/Granted literature
- US20200266124A1 RADIATOR COMPONENT AND HEAT DISSIPATION SYSTEM FOR POWER SEMICONDUCTOR DEVICE Public/Granted day:2020-08-20
Information query
IPC分类: