Invention Grant
- Patent Title: Semiconductor devices having conductive vias and methods of forming the same
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Application No.: US16371635Application Date: 2019-04-01
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Publication No.: US10886196B2Publication Date: 2021-01-05
- Inventor: Jaspreet S. Gandhi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/48 ; H01L23/532 ; H01L23/36 ; H01L23/42 ; H01L23/498
Abstract:
Semiconductor devices having a conductive via and methods of forming the same are described herein. As an example, a semiconductor devices may include a conductive via formed in a substrate material, a barrier material, a first dielectric material on the barrier material, a coupling material formed on the substrate material and on at least a portion of the dielectric material, a second dielectric material formed on the coupling material, and an interconnect formed on the conductive via.
Public/Granted literature
- US20190229039A1 SEMICONDUCTOR DEVICES HAVING CONDUCTIVE VIAS AND METHODS OF FORMING THE SAME Public/Granted day:2019-07-25
Information query
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