Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15408830Application Date: 2017-01-18
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Publication No.: US10886202B2Publication Date: 2021-01-05
- Inventor: Hiroyuki Nakamura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2016-115994 20160610
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H02M7/00 ; H02M7/5387 ; H02M7/537

Abstract:
Provided is a semiconductor device capable of having simple wiring in mounting the semiconductor device. The semiconductor device includes at least one P-terminal, at least one N-terminal, a power output terminal, at least one power supply terminal, at least one ground (GND) terminal, at least one control terminal, and a package that is rectangular in a plan view and accommodates an insulated gate bipolar transistor (IGBT) being a high-side switching element, an IGBT being a low-side switching element, and a control circuit. The at least one control terminal is disposed on a first side of the package, opposite to a second side on which the power output terminal is disposed. The at least one P-terminal, the at least one N-terminal, the at least one power supply terminal, and the at least one GND terminal are disposed on a third side of the package, orthogonal to the second side.
Public/Granted literature
- US20170358522A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-12-14
Information query
IPC分类: