Invention Grant
- Patent Title: Integration of vertical GaN varactor with HEMT
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Application No.: US16511099Application Date: 2019-07-15
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Publication No.: US10886266B1Publication Date: 2021-01-05
- Inventor: Gengming Tao , Bin Yang , Xia Li
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Withrow & Terranova, PLLC
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/93 ; H01L29/778 ; H01L29/20 ; H01L29/205 ; H03F3/195 ; H01L29/66 ; H01L21/02
Abstract:
Aspects generally relate to a P−N junction varactor that can be integrated with high electron mobility transistor (HEMT) in a single device or die. The varactor and HEMT are fabricated with different materials forming various layers of the varactor and HEMT. Using different material stack-up to form the varactor and HEMT allows characteristics of the varactor and HEMT to be varied for improved performance in different operating scenarios. The integrated varactor and HEMT device may be used for RF circuits, such as radio frequency front end (RFFE) devices for use in 5G.
Information query
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