Invention Grant
- Patent Title: Integrated circuit device including vertical memory device and method of manufacturing the same
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Application No.: US15946432Application Date: 2018-04-05
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Publication No.: US10886289B2Publication Date: 2021-01-05
- Inventor: Shin-hwan Kang , Young-hwan Son , Dong-seog Eun , Chang-sup Lee , Jae-hoon Jang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2016-0071890 20160609
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11575 ; H01L27/11524 ; H01L27/1157 ; H01L27/11582

Abstract:
In one embodiment, the semiconductor device includes a stack of alternating interlayer insulating layers and conductive layers on a substrate. Each of the conductive layers extends in a first direction less than a previous one of the conductive layers to define a landing portion of the previous one of the conductive layers. An insulating plug is in one of the conductive layers under one of the landing portions, and a contact plug extends from an upper surface of the one of the landing portions.
Public/Granted literature
- US20180226423A1 INTEGRATED CIRCUIT DEVICE INCLUDING VERTICAL MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-08-09
Information query
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