Invention Grant
- Patent Title: Semiconductor device, semiconductor wafer, memory device, and electronic device
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Application No.: US15930948Application Date: 2020-05-13
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Publication No.: US10886292B2Publication Date: 2021-01-05
- Inventor: Hajime Kimura , Tatsunori Inoue
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2017-141515 20170721
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/1157 ; H01L27/11578 ; H01L27/11524 ; H01L27/11529 ; H01L27/11556 ; H01L29/24 ; H01L29/78 ; H01L29/788 ; H01L21/28 ; H01L29/66 ; H01L21/02 ; H01L27/11573
Abstract:
An object is to provide a semiconductor device with large memory capacity. The semiconductor device includes first to seventh insulators, a first conductor, and a first semiconductor. The first conductor is positioned on a first top surface of the first insulator and a first bottom surface of the second insulator. The third insulator is positioned in a region including a side surface and a second top surface of the first insulator, a side surface of the first conductor, and a second bottom surface and a side surface of the second insulator. The fourth insulator, the fifth insulator, and the first semiconductor are sequentially stacked on the third insulator. The sixth insulator is in contact with the fifth insulator in a region overlapping the first conductor. The seventh insulator is positioned in a region including the first semiconductor and the sixth insulator.
Public/Granted literature
- US20200279860A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER, MEMORY DEVICE, AND ELECTRONIC DEVICE Public/Granted day:2020-09-03
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