Invention Grant
- Patent Title: Semiconductor memory device including a laminated body with a plurality of semiconductor layers
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Application No.: US16785812Application Date: 2020-02-10
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Publication No.: US10886297B2Publication Date: 2021-01-05
- Inventor: Yasuhiro Shimura
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; H01L27/11582 ; H01L27/1157 ; H01L27/11573 ; G11C16/10 ; G11C16/26 ; G11C16/24 ; H01L27/11565 ; G11C16/08

Abstract:
A plurality of semiconductor layers have longitudinally a first direction, have a peripheral area surrounded by the plurality of control gate electrodes, and are arranged in a plurality of rows within the laminated body. A controller controls a voltage applied to the control gate electrodes and bit lines. The controller, during a writing operation, applies a first voltage to a first bit line connected to the semiconductor layer positioned in a first row closer to the insulation separating layer, and applies a second voltage larger than the first voltage to a second bit line connected to the semiconductor layer positioned in a second row positioned further from the insulation separating layer with respect to the first row, among the plurality of rows.
Public/Granted literature
- US20200176472A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2020-06-04
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