A silicon carbide semiconductor device has an n-type drift layer provided on a front surface of an n+-type silicon carbide substrate. In a surface layer of the n-type drift layer, a first p+-type region is provided. On a front surface side of the n+-type silicon carbide substrate, a trench is formed. The first p+-type region includes a deep first p+-type region and a shallow first p+-type region, the deep first p+-type region being at a position farther toward a drain electrode than a bottom of the trench is and the shallow first p+-type region being at a position closer to a source region than the bottom of the trench is. An impurity concentration of the shallow first p+-type region is lower than an impurity concentration of the deep first p+-type region.