Invention Grant
- Patent Title: I/O device scheme for gate-all-around transistors
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Application No.: US16108567Application Date: 2018-08-22
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Publication No.: US10886368B2Publication Date: 2021-01-05
- Inventor: Jingyun Zhang , Alexander Reznicek , Choonghyun Lee , Xin Miao
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/786 ; H01L21/8234 ; H01L21/02
Abstract:
An I/O device nanosheet material stack of suspended semiconductor channel material nanosheets is provided above a semiconductor substrate. A physically exposed portion of each suspended semiconductor channel material nanosheet is thinned to increase the inter-nanosheet spacing between each vertically stacked semiconductor channel material nanosheet. An I/O device functional gate structure is formed wrapping around the thinned portion of each suspended semiconductor channel material nanosheet.
Public/Granted literature
- US20200066839A1 I/O DEVICE SCHEME FOR GATE-ALL-AROUND TRANSISTORS Public/Granted day:2020-02-27
Information query
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