- Patent Title: High electron mobility transistor with tunable threshold voltage
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Application No.: US15785596Application Date: 2017-10-17
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Publication No.: US10886393B2Publication Date: 2021-01-05
- Inventor: Koon Hoo Teo , Nadim Chowdhury
- Applicant: Mitsubishi Electric Research Laboratories, Inc.
- Applicant Address: US MA Cambridge
- Assignee: Mitsubishi Electric Research Laboratories, Inc.
- Current Assignee: Mitsubishi Electric Research Laboratories, Inc.
- Current Assignee Address: US MA Cambridge
- Agent Gennadiy Vinokur; James McAleenan; Hironori Tsukamoto
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/78 ; H01L29/423 ; H01L29/20 ; H01L29/10 ; H01L29/51 ; H03K17/687 ; H01L29/66 ; H01L21/306 ; H01L21/285 ; H01L21/02 ; H01L29/205 ; H01L29/06
Abstract:
A high electron mobility transistor includes a set of electrodes, such as a source, a drain, a top gate, and a side gate, and includes a semiconductor structure having a fin extending between the source and the drain. The top gate is arranged on top of the fin, and the side gate is arranged on a sidewall of the fin at a distance from the top gate. The semiconductor structure includes a cap layer positioned beneath the top gate and a channel layer arranged beneath the cap layer for providing electrical conduction. The cap layer includes nitride-based semiconductor material to enable a heterojunction forming a carrier channel between the source and the drain.
Public/Granted literature
- US20190115463A1 High Electron Mobility Transistor with Tunable Threshold Voltage Public/Granted day:2019-04-18
Information query
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