Invention Grant
- Patent Title: Semiconductor device with well region and protection region electrically connected by connection region
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Application No.: US16305170Application Date: 2016-05-30
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Publication No.: US10886401B2Publication Date: 2021-01-05
- Inventor: Wei Ni , Tetsuya Hayashi , Yasuaki Hayami , Ryota Tanaka
- Applicant: NISSAN MOTOR CO., LTD.
- Applicant Address: JP Yokohama
- Assignee: NISSAN MOTOR CO., LTD.
- Current Assignee: NISSAN MOTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: Foley & Lardner LLP
- International Application: PCT/JP2016/065909 WO 20160530
- International Announcement: WO2017/208301 WO 20171207
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/08 ; H01L29/423 ; H01L29/66 ; H01L21/8234 ; H01L29/16
Abstract:
A semiconductor device includes: a substrate; a drift region formed on a main surface of the substrate; a well region formed in a main surface of the drift region; a source region formed in the well region; a gate groove formed from the main surface of the drift region in a perpendicular direction while being in contact with the source region, the well region, and the drift region; a drain region formed in the main surface of the drift region; a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween; a protection region formed on a surface of the gate insulating film facing the drain region; and a connection region formed in contact with the well region and the protection region.
Public/Granted literature
- US20190341486A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-11-07
Information query
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