Invention Grant
- Patent Title: Semiconductor device, manufacturing method for semiconductor device, and electronic apparatus
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Application No.: US16466251Application Date: 2017-11-17
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Publication No.: US10886407B2Publication Date: 2021-01-05
- Inventor: Yuki Yanagisawa
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JP2016-248272 20161221
- International Application: PCT/JP2017/041518 WO 20171117
- International Announcement: WO2018/116716 WO 20180628
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/12 ; H01L21/84
Abstract:
A semiconductor device formed by using an SOI substrate including a substrate, a BOX layer formed on the substrate, and an SOI layer formed on the BOX layer, in which a part of or all of the BOX layer at least in a part of the BOX layer arranged in a non-active area adjacent to an active area has been removed, and the BOX layer in a portion where the SOI layer forming the active area is arranged is configured to remain deformation used to apply stress to the SOI layer.
Public/Granted literature
- US20200066909A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS Public/Granted day:2020-02-27
Information query
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